GT650N15K

GT650N15K

Images are for reference only
See Product Specifications

GT650N15K
Description:
N150V,RD(MAX)<65M@10V,VTH2.5V~4.
Package:
Tape & Reel (TR)
Datasheet:
GT650N15K Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT650N15K
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 75 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2480
Stock:
2480 Can Ship Immediately
  • Share:
For Use With
CDM7-600LR TR13 PBFREE
CDM7-600LR TR13 PBFREE
Central Semiconductor Corp
MOSFET N-CH 600V 7A DPAK
DMN3404L-7
DMN3404L-7
Diodes Incorporated
MOSFET N-CH 30V 5.8A SOT23-3
BSZ120P03NS3GATMA1
BSZ120P03NS3GATMA1
Infineon Technologies
MOSFET P-CH 30V 11A/40A 8TSDSON
STF3LN80K5
STF3LN80K5
STMicroelectronics
MOSFET N-CH 800V 2A TO220FP
SUD20N10-66L-GE3
SUD20N10-66L-GE3
Vishay Siliconix
MOSFET N-CH 100V 16.9A TO252
FDMC86106LZ
FDMC86106LZ
Fairchild Semiconductor
MOSFET N-CH 100V 3.3A POWER33
IPS60R3K4CEAKMA1
IPS60R3K4CEAKMA1
Infineon Technologies
CONSUMER
MMFT5P03HDT1
MMFT5P03HDT1
onsemi
MOSFET P-CH 30V 3.7A SOT223
JANTXV2N6784
JANTXV2N6784
Microsemi Corporation
MOSFET N-CH 200V 2.25A TO205AF
2SK4088LS-1E
2SK4088LS-1E
onsemi
MOSFET N-CH 650V 7.5A TO220F-3FS
NDD60N550U1T4G
NDD60N550U1T4G
onsemi
MOSFET N-CH 600V 8.2A DPAK
IRF8714TRPBF-1
IRF8714TRPBF-1
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
You May Also Be Interested In
GT1003D
GT1003D
Goford Semiconductor
N100V,RD(MAX)<130M@10V,RD(MAX)<1
G33N03S
G33N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G06N10
G06N10
Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3
G10N10A
G10N10A
Goford Semiconductor
N100V,RD(MAX)130mOHM@10V,TO-252
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
2301H
2301H
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<
06N06L
06N06L
Goford Semiconductor
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
G75P04K
G75P04K
Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
G65P06D5
G65P06D5
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10