G2014

G2014

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G2014
Description:
N20V,RD(MAX)<[email protected],RD(MAX)<11M
Package:
Tape & Reel (TR)
Datasheet:
G2014 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G2014
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1710 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-DFN (2x2)
Package / Case:6-WDFN Exposed Pad
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Share:
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