06N06L

06N06L

Images are for reference only
See Product Specifications

06N06L
Description:
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Package:
Tape & Reel (TR)
Datasheet:
06N06L Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:06N06L
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.5A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:765 pF @ 30 V
FET Feature:-
Power Dissipation (Max):960mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3L
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 5885
Stock:
5885 Can Ship Immediately
  • Share:
For Use With
CSD18510KTTT
CSD18510KTTT
Texas Instruments
MOSFET N-CH 40V 274A DDPAK
AO4421
AO4421
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 60V 6.2A 8SOIC
SI7115DN-T1-GE3
SI7115DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 150V 8.9A PPAK1212-8
FQP13N10
FQP13N10
onsemi
MOSFET N-CH 100V 12.8A TO220-3
VN2210N3-G
VN2210N3-G
Microchip Technology
MOSFET N-CH 100V 1.2A TO92-3
IXTH130N15X4
IXTH130N15X4
IXYS
MOSFET N-CH 150V 130A TO247
MIC94052BC6TR
MIC94052BC6TR
Microchip Technology
P-CHANNEL POWER MOSFET
SIHP17N80AEF-GE3
SIHP17N80AEF-GE3
Vishay Siliconix
E SERIES POWER MOSFET WITH FAST
FQP8N90C
FQP8N90C
onsemi
MOSFET N-CH 900V 6.3A TO220-3
SI1037X-T1-E3
SI1037X-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 770MA SC89
AOT10T60PL
AOT10T60PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 10A TO220
R6076ENZ1C9
R6076ENZ1C9
Rohm Semiconductor
MOSFET N-CH 600V 76A TO247
You May Also Be Interested In
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G05P06L
G05P06L
Goford Semiconductor
P60V,RD(MAX)<120M@-10V,RD(MAX)<1
G28N03D3
G28N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
GT110N06S
GT110N06S
Goford Semiconductor
N60V,RD(MAX)<[email protected],RD(MAX)<1
G10N03S
G10N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
G7P03L
G7P03L
Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
GT100N12M
GT100N12M
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
G30N04D3
G30N04D3
Goford Semiconductor
MOSFET N-CH 40V 30A DFN33-8L
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.