G65P06D5

G65P06D5

Images are for reference only
See Product Specifications

G65P06D5
Description:
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Package:
Tape & Reel (TR)
Datasheet:
G65P06D5 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G65P06D5
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5814 pF @ 25 V
FET Feature:-
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (4.9x5.75)
Package / Case:8-PowerTDFN
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
FDP120AN15A0
FDP120AN15A0
Fairchild Semiconductor
MOSFET N-CH 150V 2.8A/14A TO220
2SK1292(02)-S6-AZ
2SK1292(02)-S6-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
STB120N4LF6
STB120N4LF6
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
SPD30P06PGBTMA1
SPD30P06PGBTMA1
Infineon Technologies
MOSFET P-CH 60V 30A TO252-3
NTNS3166NZT5G
NTNS3166NZT5G
onsemi
MOSFET N-CH 20V 0.361A SOT883
TSM60NB600CH C5G
TSM60NB600CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 7A TO251
AUIRFS3006-7TRL
AUIRFS3006-7TRL
Infineon Technologies
MOSFET N-CH 60V 293A D2PAK-7P
APT22F120L
APT22F120L
Microchip Technology
MOSFET N-CH 1200V 23A TO264
IRF7459PBF
IRF7459PBF
Infineon Technologies
MOSFET N-CH 20V 12A 8SO
RJL5014DPK-00#T0
RJL5014DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 500V 19A TO3P
BVSS138LT3G
BVSS138LT3G
onsemi
MOSFET N-CH 50V 200MA SOT-23-3
RD3L01BATTL1
RD3L01BATTL1
Rohm Semiconductor
PCH -60V -10A POWER MOSFET - RD3
You May Also Be Interested In
GT090N06D52
GT090N06D52
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
GT110N06S
GT110N06S
Goford Semiconductor
N60V,RD(MAX)<[email protected],RD(MAX)<1
G01N20LE
G01N20LE
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
GT025N06D5
GT025N06D5
Goford Semiconductor
N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.
G06P01E
G06P01E
Goford Semiconductor
P12V,RD(MAX)<[email protected],RD(MAX)<4
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
GT105N10T
GT105N10T
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10