G10N10A

G10N10A

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G10N10A
Description:
N100V,RD(MAX)130mOHM@10V,TO-252
Package:
Tape & Reel (TR)
Datasheet:
G10N10A Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G10N10A
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:130mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:-
Power Dissipation (Max):28W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 4851
Stock:
4851 Can Ship Immediately
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