G33N03S

G33N03S

Images are for reference only
See Product Specifications

G33N03S
Description:
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Package:
Tape & Reel (TR)
Datasheet:
G33N03S Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G33N03S
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1550 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
In Stock: 4000
Stock:
4000 Can Ship Immediately
  • Share:
For Use With
ZXMP6A17E6QTA
ZXMP6A17E6QTA
Diodes Incorporated
MOSFET P-CH 60V 2.3A SOT26
DMN95H8D5HCTI
DMN95H8D5HCTI
Diodes Incorporated
MOSFET N-CHANNEL 950V ITO220AB
SQM50034E_GE3
SQM50034E_GE3
Vishay Siliconix
MOSFET N-CH 60V 100A TO263
DMT8030LFDF-7
DMT8030LFDF-7
Diodes Incorporated
MOSFET BVDSS: 61V~100V U-DFN2020
IRFR320TRPBF-BE3
IRFR320TRPBF-BE3
Vishay Siliconix
N-CHANNEL 400V
IPP084N06L3GXKSA1
IPP084N06L3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 50A TO220-3
IRLU2905Z
IRLU2905Z
Infineon Technologies
MOSFET N-CH 55V 42A I-PAK
SIR888DP-T1-GE3
SIR888DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 40A PPAK SO-8
IPD079N06L3GBTMA1
IPD079N06L3GBTMA1
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3
RV1C001ZPT2L
RV1C001ZPT2L
Rohm Semiconductor
MOSFET P-CH 20V 100MA VML0806
RD3U080AAFRATL
RD3U080AAFRATL
Rohm Semiconductor
250V 8A TO-252, AUTOMOTIVE POWER
R6050JNZC8
R6050JNZC8
Rohm Semiconductor
MOSFET N-CH 600V 50A TO3
You May Also Be Interested In
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
G05P06L
G05P06L
Goford Semiconductor
P60V,RD(MAX)<120M@-10V,RD(MAX)<1
G1006LE
G1006LE
Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1
18N10
18N10
Goford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
G29
G29
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<4
G15P04K
G15P04K
Goford Semiconductor
P40V,RD(MAX)<39M@-10V,RD(MAX)<70
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G6P06
G6P06
Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
G07P04S
G07P04S
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
GT095N10D5
GT095N10D5
Goford Semiconductor
N100V,RD(MAX)<11M@10V,RD(MAX)<15