G06N10

G06N10

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G06N10
Description:
N100V,RD(MAX)<240M@10V,VTH1.2V~3
Package:
Tape & Reel (TR)
Datasheet:
G06N10 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G06N10
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:240mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 50 V
FET Feature:-
Power Dissipation (Max):25W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2490
Stock:
2490 Can Ship Immediately
  • Share:
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