G12P10K

G12P10K

Images are for reference only
See Product Specifications

G12P10K
Description:
P100V,RD(MAX)<200M@-10V,RD(MAX)<
Package:
Tape & Reel (TR)
Datasheet:
G12P10K Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G12P10K
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1720 pF @ 50 V
FET Feature:-
Power Dissipation (Max):57W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2468
Stock:
2468 Can Ship Immediately
  • Share:
For Use With
FDMC8015L
FDMC8015L
onsemi
MOSFET N-CH 40V 7A/18A 8MLP
IPAW60R360P7SXKSA1
IPAW60R360P7SXKSA1
Infineon Technologies
MOSFET N-CH 650V 9A TO220
IPSA70R750P7SAKMA1
IPSA70R750P7SAKMA1
Infineon Technologies
MOSFET N-CH 700V 6.5A TO251-3
BSZ180P03NS3GATMA1
BSZ180P03NS3GATMA1
Infineon Technologies
MOSFET P-CH 30V 9A/39.6A TSDSON
NTR4501NT3H
NTR4501NT3H
onsemi
NFET SOT23 20V 3.2A 70R T
IPB260N06N3G
IPB260N06N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
AOH3106
AOH3106
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 2A SOT223
SUM60030E-GE3
SUM60030E-GE3
Vishay Siliconix
MOSFET N-CH 80V 120A TO263
IPB80N04S204ATMA2
IPB80N04S204ATMA2
Infineon Technologies
MOSFET N-CH 40V 80A TO263-3
IPS80R1K4P7
IPS80R1K4P7
Infineon Technologies
IPS80R1K4 - 800V COOLMOS N-CHANN
HUFA75333S3S
HUFA75333S3S
onsemi
MOSFET N-CH 55V 66A D2PAK
NTD4959NHT4G
NTD4959NHT4G
onsemi
MOSFET N-CH 30V 9A/58A DPAK
You May Also Be Interested In
G1006LE
G1006LE
Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
60N06
60N06
Goford Semiconductor
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
G12P04K
G12P04K
Goford Semiconductor
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
GC20N65T
GC20N65T
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
G2304
G2304
Goford Semiconductor
MOSFET N-CH 30V 3.6A SOT-23
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G15N06K
G15N06K
Goford Semiconductor
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
G16P03S
G16P03S
Goford Semiconductor
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
630AT
630AT
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3
18N20
18N20
Goford Semiconductor
N 200V, RD(MAX)<0.16@10V,VTH1.0V