2301H

2301H

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2301H
Description:
P30V,RD(MAX)<[email protected],RD(MAX)<
Package:
Tape & Reel (TR)
Datasheet:
2301H Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2301H
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:125mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 2.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:405 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 0
Stock:
0 Can Ship Immediately
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