GT060N04D3

GT060N04D3

Images are for reference only
See Product Specifications

GT060N04D3
Description:
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
Package:
Tape & Reel (TR)
Datasheet:
GT060N04D3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT060N04D3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1282 pF @ 20 V
FET Feature:-
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (3.15x3.05)
Package / Case:8-PowerVDFN
In Stock: 9980
Stock:
9980 Can Ship Immediately
  • Share:
For Use With
BSN20Q-7
BSN20Q-7
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
FDD86367-F085
FDD86367-F085
onsemi
MOSFET N-CH 80V 100A DPAK
IPC100N04S51R9ATMA1
IPC100N04S51R9ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A 8TDSON-34
TPH1R104PB,L1XHQ
TPH1R104PB,L1XHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 120A 8SOP
SIR608DP-T1-RE3
SIR608DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 45V 51A/208A PPAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
DMT61M5SPSW-13
DMT61M5SPSW-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI506
FCPF190N60E-F154
FCPF190N60E-F154
onsemi
MOSFET N-CH 600V 20.6A TO220F-3
FQB13N10LTM
FQB13N10LTM
onsemi
MOSFET N-CH 100V 12.8A D2PAK
SI4462DY-T1-E3
SI4462DY-T1-E3
Vishay Siliconix
MOSFET N-CH 200V 1.15A 8-SOIC
NTD4856NT4G
NTD4856NT4G
onsemi
MOSFET N-CH 25V 13.3A/89A DPAK
SMP3003-TL-1E
SMP3003-TL-1E
onsemi
MOSFET P-CH 75V 100A D2PAK
You May Also Be Interested In
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
G3401L
G3401L
Goford Semiconductor
P30V,RD(MAX)<60M@-10V,RD(MAX)<70
G2012
G2012
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G1003A
G1003A
Goford Semiconductor
N100V,RD(MAX)<210M@10V,RD(MAX)<2
G86N06K
G86N06K
Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
G02P06
G02P06
Goford Semiconductor
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
G15N06K
G15N06K
Goford Semiconductor
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
G18P03D3
G18P03D3
Goford Semiconductor
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
GT105N10F
GT105N10F
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
G11S
G11S
Goford Semiconductor
P-20V,RD(MAX)<[email protected],RD(MAX
G08N06S
G08N06S
Goford Semiconductor
N60V, RD(MAX)<30M@10V,RD(MAX)<40