G1006LE

G1006LE

Images are for reference only
See Product Specifications

G1006LE
Description:
N100V,RD(MAX)<150M@10V,RD(MAX)<1
Package:
Tape & Reel (TR)
Datasheet:
G1006LE Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G1006LE
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:150mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:622 pF @ 50 V
FET Feature:-
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 2988
Stock:
2988 Can Ship Immediately
  • Share:
For Use With
DMG3414U-7
DMG3414U-7
Diodes Incorporated
MOSFET N-CH 20V 4.2A SOT23-3
IRFR9310TRLPBF
IRFR9310TRLPBF
Vishay Siliconix
MOSFET P-CH 400V 1.8A DPAK
IPB100N06S205ATMA4
IPB100N06S205ATMA4
Infineon Technologies
MOSFET N-CH 55V 100A TO263-3
IPA60R360P7XKSA1
IPA60R360P7XKSA1
Infineon Technologies
MOSFET N-CHANNEL 650V 9A TO220
MCB200N06Y-TP
MCB200N06Y-TP
Micro Commercial Co
N-CHANNEL MOSFET, D2-PAK
NVMFS4C03NWFT1G
NVMFS4C03NWFT1G
onsemi
MOSFET N-CH 30V 31.4A/143A 5DFN
APT20M22JVRU3
APT20M22JVRU3
Microchip Technology
MOSFET N-CH 200V 97A SOT227
APT100M50J
APT100M50J
Microchip Technology
MOSFET N-CH 500V 103A SOT227
APL602J
APL602J
Microchip Technology
MOSFET N-CH 600V 43A ISOTOP
IRFR224BTM_TC002
IRFR224BTM_TC002
onsemi
MOSFET N-CH 250V 3.8A DPAK
SI5401DC-T1-GE3
SI5401DC-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 5.2A 1206-8
PMV130ENEA/DG/B2R
PMV130ENEA/DG/B2R
Nexperia USA Inc.
MOSFET N-CH 40V 2.1A TO236AB
You May Also Be Interested In
G3404B
G3404B
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
GT1003D
GT1003D
Goford Semiconductor
N100V,RD(MAX)<130M@10V,RD(MAX)<1
G20N03D2
G20N03D2
Goford Semiconductor
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
G23N06K
G23N06K
Goford Semiconductor
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
5N20A
5N20A
Goford Semiconductor
N200V,RD(MAX)<650M@10V,VTH1V~3V,
G20P08K
G20P08K
Goford Semiconductor
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
GC11N65M
GC11N65M
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
2301H
2301H
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<
G48N03D3
G48N03D3
Goford Semiconductor
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
G100N03D5
G100N03D5
Goford Semiconductor
N-CH, 30V, 100A, RD(MAX)<3.5M@10
G08N06S
G08N06S
Goford Semiconductor
N60V, RD(MAX)<30M@10V,RD(MAX)<40