G05P06L

G05P06L

Images are for reference only
See Product Specifications

G05P06L
Description:
P60V,RD(MAX)<120M@-10V,RD(MAX)<1
Package:
Tape & Reel (TR)
Datasheet:
G05P06L Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G05P06L
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1366 pF @ 50 V
FET Feature:-
Power Dissipation (Max):4.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 453
Stock:
453 Can Ship Immediately
  • Share:
For Use With
DMG2301L-7
DMG2301L-7
Diodes Incorporated
MOSFET P-CH 20V 3A SOT23
IRF7205TRPBF
IRF7205TRPBF
Infineon Technologies
MOSFET P-CH 30V 4.6A 8SO
BSP92PH6327XTSA1
BSP92PH6327XTSA1
Infineon Technologies
MOSFET P-CH 250V 260MA SOT223-4
FCU4300N80Z
FCU4300N80Z
Fairchild Semiconductor
MOSFET N-CH 800V 1.6A I-PAK
STB42N65M5
STB42N65M5
STMicroelectronics
MOSFET N-CH 650V 33A D2PAK
SQJ481EP-T1_BE3
SQJ481EP-T1_BE3
Vishay Siliconix
P-CHANNEL 80-V (D-S) 175C MOSFET
DMT3020LFCL-7
DMT3020LFCL-7
Diodes Incorporated
MOSFET N-CH 30V 7.6A 6UDFN
NTMFS6H800NLT1G
NTMFS6H800NLT1G
onsemi
MOSFET N-CH 80V 30A/224A 5DFN
IRF540ZSTRL
IRF540ZSTRL
Infineon Technologies
MOSFET N-CH 100V 36A D2PAK
AUIRFR4105Z
AUIRFR4105Z
Infineon Technologies
MOSFET N-CH 55V 20A DPAK
IXFT74N20Q
IXFT74N20Q
IXYS
MOSFET N-CH TO268
RV2C001ZPT2L
RV2C001ZPT2L
Rohm Semiconductor
MOSFET P-CH 20V 100MA DFN1006-3
You May Also Be Interested In
G4953S
G4953S
Goford Semiconductor
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
GT1003D
GT1003D
Goford Semiconductor
N100V,RD(MAX)<130M@10V,RD(MAX)<1
G20N03D2
G20N03D2
Goford Semiconductor
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
18N10
18N10
Goford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
G26P04D5
G26P04D5
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G6P06
G6P06
Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
18N20
18N20
Goford Semiconductor
N 200V, RD(MAX)<0.16@10V,VTH1.0V