G50N03J

G50N03J

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G50N03J
Description:
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Package:
Tube
Datasheet:
G50N03J Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G50N03J
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1255 pF @ 15 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Stub Leads, IPak
In Stock: 4939
Stock:
4939 Can Ship Immediately
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