G06N06S

G06N06S

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G06N06S
Description:
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
Package:
Tape & Reel (TR)
Datasheet:
G06N06S Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G06N06S
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
In Stock: 2146
Stock:
2146 Can Ship Immediately
  • Share:
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