G06N06S

G06N06S

Images are for reference only
See Product Specifications

G06N06S
Description:
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
Package:
Tape & Reel (TR)
Datasheet:
G06N06S Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G06N06S
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
In Stock: 2146
Stock:
2146 Can Ship Immediately
  • Share:
For Use With
2SK1094-E
2SK1094-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
FDN5632N-F085
FDN5632N-F085
onsemi
MOSFET N-CH 60V 1.7A SUPERSOT3
STW13N80K5
STW13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO247
PJQ5444-AU_R2_000A1
PJQ5444-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
SCT30N120D2
SCT30N120D2
STMicroelectronics
SICFET N-CH 1200V 40A HIP247
STP23NM60ND
STP23NM60ND
STMicroelectronics
MOSFET N-CH 600V 19.5A TO220AB
IRFR310TRR
IRFR310TRR
Vishay Siliconix
MOSFET N-CH 400V 1.7A DPAK
IRF7420TR
IRF7420TR
Infineon Technologies
MOSFET P-CH 12V 11.5A 8SO
IRFL9110PBF
IRFL9110PBF
Vishay Siliconix
MOSFET P-CH 100V 1.1A SOT223
STP9NM50N
STP9NM50N
STMicroelectronics
MOSFET N-CH 500V 5A TO220AB
FKI06075
FKI06075
Sanken
MOSFET N-CH 60V 52A TO220F
RSS100N03HZGTB
RSS100N03HZGTB
Rohm Semiconductor
NCH 30V 10A AUTOMOTIVE POWER MOS
You May Also Be Interested In
GT090N06D52
GT090N06D52
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
GT650N15K
GT650N15K
Goford Semiconductor
N150V,RD(MAX)<65M@10V,VTH2.5V~4.
G20N03K
G20N03K
Goford Semiconductor
N30V,RD(MAX)<20M@10V,RD(MAX)<24M
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
G26P04K
G26P04K
Goford Semiconductor
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
630AT
630AT
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3
G65P06T
G65P06T
Goford Semiconductor
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
G08N06S
G08N06S
Goford Semiconductor
N60V, RD(MAX)<30M@10V,RD(MAX)<40