G50N03K

G50N03K

Images are for reference only
See Product Specifications

G50N03K
Description:
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Package:
Tape & Reel (TR)
Datasheet:
G50N03K Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G50N03K
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:65A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 15 V
FET Feature:-
Power Dissipation (Max):48W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2500
Stock:
2500 Can Ship Immediately
  • Share:
For Use With
RJK0391DPA-WS#J53
RJK0391DPA-WS#J53
Renesas Electronics America Inc
POWER TRANSISTOR, MOSFET
STW70N60M2
STW70N60M2
STMicroelectronics
MOSFET N-CH 600V 68A TO247
FQPF10N60C
FQPF10N60C
onsemi
MOSFET N-CH 600V 9.5A TO220F
BUK6D385-100EX
BUK6D385-100EX
Nexperia USA Inc.
MOSFET N-CH 100V 1.4A/3.7A 6DFN
IPD180N10N3GATMA1
IPD180N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 43A TO252-3
STH240N10F7-2
STH240N10F7-2
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-2
AONR32314
AONR32314
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 17A/30A 8DFN
SI7328DN-T1-E3
SI7328DN-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK 1212-8
PH3330L,115
PH3330L,115
NXP USA Inc.
MOSFET N-CH 30V 100A LFPAK56
IRFL024N
IRFL024N
Infineon Technologies
MOSFET N-CH 55V 2.8A SOT223
IXFK16N90Q
IXFK16N90Q
IXYS
MOSFET N-CH 900V 16A TO264AA
AUIRFSL4115
AUIRFSL4115
Infineon Technologies
MOSFET N-CH 150V 99A TO262
You May Also Be Interested In
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
9926
9926
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<30
G2012
G2012
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
GT55N06D5
GT55N06D5
Goford Semiconductor
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
3415A
3415A
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<6
G6P06
G6P06
Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
G30N02T
G30N02T
Goford Semiconductor
N20V,RD(MAX)<[email protected],VTH0.5V~1.
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
GT095N10K
GT095N10K
Goford Semiconductor
N100V, RD(MAX)<10.5M@10V,RD(MAX)
G08N06S
G08N06S
Goford Semiconductor
N60V, RD(MAX)<30M@10V,RD(MAX)<40