G50N03K

G50N03K

Images are for reference only
See Product Specifications

G50N03K
Description:
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Package:
Tape & Reel (TR)
Datasheet:
G50N03K Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G50N03K
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:65A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 15 V
FET Feature:-
Power Dissipation (Max):48W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2500
Stock:
2500 Can Ship Immediately
  • Share:
For Use With
DMN2990UFZ-7B
DMN2990UFZ-7B
Diodes Incorporated
MOSFET N-CH 20V 250MA 3DFN
2SK1620L-E
2SK1620L-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
NTBG045N065SC1
NTBG045N065SC1
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
IPAN50R500CEXKSA1
IPAN50R500CEXKSA1
Infineon Technologies
MOSFET N-CH 500V 11.1A TO220
BUK9Y4R8-60E,115
BUK9Y4R8-60E,115
Nexperia USA Inc.
MOSFET N-CH 60V 100A LFPAK56
SSM3K127TU,LF
SSM3K127TU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 2A UFM
IXTH1N200P3HV
IXTH1N200P3HV
IXYS
MOSFET N-CH 2000V 1A TO247HV
FKI10198
FKI10198
Sanken
MOSFET N-CH 100V 31A TO220F
SSM3J306T(TE85L,F)
SSM3J306T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 2.4A TSM
NVMYS2D2N06CLTWG
NVMYS2D2N06CLTWG
onsemi
MOSFET N-CH 60V 31A/185A LFPAK4
BSP299H6327XUSA1
BSP299H6327XUSA1
Infineon Technologies
MOSFET N-CH 500V 400MA SOT223-4
AOWF10T60
AOWF10T60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 10A TO262F
You May Also Be Interested In
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G28N03D3
G28N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
5N20A
5N20A
Goford Semiconductor
N200V,RD(MAX)<650M@10V,VTH1V~3V,
GT110N06S
GT110N06S
Goford Semiconductor
N60V,RD(MAX)<[email protected],RD(MAX)<1
3415A
3415A
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<6
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
G26P04D5
G26P04D5
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G16P03S
G16P03S
Goford Semiconductor
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,
G18P03D3
G18P03D3
Goford Semiconductor
P30V,RD(MAX)<10M@-10V,RD(MAX)<15