GT52N10D5

GT52N10D5

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GT52N10D5
Description:
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Package:
Tape & Reel (TR)
Datasheet:
GT52N10D5 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT52N10D5
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2626 pF @ 50 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5.2x5.86)
Package / Case:8-PowerTDFN
In Stock: 12735
Stock:
12735 Can Ship Immediately
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