GT52N10D5

GT52N10D5

Images are for reference only
See Product Specifications

GT52N10D5
Description:
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Package:
Tape & Reel (TR)
Datasheet:
GT52N10D5 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT52N10D5
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2626 pF @ 50 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5.2x5.86)
Package / Case:8-PowerTDFN
In Stock: 12735
Stock:
12735 Can Ship Immediately
  • Share:
For Use With
TSM7N90CI C0G
TSM7N90CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 7A ITO220AB
FDMS7660
FDMS7660
onsemi
MOSFET N-CH 30V 25A/42A 8PQFN
TSM060N03ECP ROG
TSM060N03ECP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 30V 70A TO252
IPD60R3K4CEAUMA1
IPD60R3K4CEAUMA1
Infineon Technologies
MOSFET N-CH 650V 2.6A TO252-3
DMN601WKQ-13
DMN601WKQ-13
Diodes Incorporated
MOSFET N-CH 60V SOT323
FCA36N60NF
FCA36N60NF
onsemi
MOSFET N-CH 600V 34.9A TO3PN
STW75N60M6-4
STW75N60M6-4
STMicroelectronics
MOSFET N-CH 600V 72A TO247-4
BUK9230-100B,118
BUK9230-100B,118
Nexperia USA Inc.
MOSFET N-CH 100V 47A DPAK
BUK953R2-40B,127
BUK953R2-40B,127
Nexperia USA Inc.
MOSFET N-CH 40V 100A TO220AB
IXFH26N60Q
IXFH26N60Q
IXYS
MOSFET N-CH 600V 26A TO247AD
NTTS2P03R2
NTTS2P03R2
onsemi
MOSFET P-CH 30V 2.1A MICRO8
IPP052N06L3GHKSA1
IPP052N06L3GHKSA1
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
You May Also Be Interested In
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G3404B
G3404B
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G06N06S
G06N06S
Goford Semiconductor
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
G12P04K
G12P04K
Goford Semiconductor
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
G48N03D3
G48N03D3
Goford Semiconductor
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
G07P04S
G07P04S
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.