G35N02K

G35N02K

Images are for reference only
See Product Specifications

G35N02K
Description:
N20V,RD(MAX)<[email protected],RD(MAX)<18
Package:
Tape & Reel (TR)
Datasheet:
G35N02K Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G35N02K
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:13mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1380 pF @ 10 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2380
Stock:
2380 Can Ship Immediately
  • Share:
For Use With
TP65H035WSQA
TP65H035WSQA
Transphorm
GANFET N-CH 650V 47.2A TO247-3
AO3423
AO3423
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 2A SOT23-3L
FDMC86102LZ
FDMC86102LZ
onsemi
MOSFET N-CH 100V 7A/18A 8MLP
IRFHM830TRPBF
IRFHM830TRPBF
Infineon Technologies
MOSFET N-CH 30V 21A/40A PQFN
IRF3205STRLPBF
IRF3205STRLPBF
Infineon Technologies
MOSFET N-CH 55V 110A D2PAK
PJF13NA50_T0_00001
PJF13NA50_T0_00001
Panjit International Inc.
500V N-CHANNEL MOSFET
DMN3030LFG-7
DMN3030LFG-7
Diodes Incorporated
MOSFET N-CH 30V 5.3A PWRDI3333-8
NTMFS1D15N03CGT1G
NTMFS1D15N03CGT1G
onsemi
MOSFET N-CH 30V 43A/245A 5DFN
DMTH4M70SPGWQ-13
DMTH4M70SPGWQ-13
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI808
IRF1407L
IRF1407L
Infineon Technologies
MOSFET N-CH 75V 100A TO262
IRF7466PBF
IRF7466PBF
Infineon Technologies
MOSFET N-CH 30V 11A 8SO
BUK9Y3R0-40E/DMANX
BUK9Y3R0-40E/DMANX
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
You May Also Be Interested In
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
G2012
G2012
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G23N06K
G23N06K
Goford Semiconductor
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
18N10
18N10
Goford Semiconductor
N100V,RD(MAX)<53M@10V,RD(MAX)<63
G10P03
G10P03
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<3
G45P02D3
G45P02D3
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
45P40
45P40
Goford Semiconductor
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
GT105N10T
GT105N10T
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<