G20N03D2

G20N03D2

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G20N03D2
Description:
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Package:
Tape & Reel (TR)
Datasheet:
G20N03D2 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G20N03D2
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:24mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:873 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-DFN (2x2)
Package / Case:6-WDFN Exposed Pad
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Share:
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