G1002L

G1002L

Images are for reference only
See Product Specifications

G1002L
Description:
N100V,RD(MAX)<250M@10V,VTH1.2V~2
Package:
Tape & Reel (TR)
Datasheet:
G1002L Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G1002L
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:413 pF @ 50 V
FET Feature:-
Power Dissipation (Max):1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3L
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Share:
For Use With
NTD6N40-001
NTD6N40-001
onsemi
NFET DPAK 400V 1.1R
NP109N055PUK-E1-AY
NP109N055PUK-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 55V 110A TO263
DMT10H010LK3-13
DMT10H010LK3-13
Diodes Incorporated
MOSFET N-CH 100V 68.8A TO252
BUK7Y7R6-40E/C4115
BUK7Y7R6-40E/C4115
NXP USA Inc.
N-CHANNEL POWER MOSFET
NVMFS6H836NLWFT1G
NVMFS6H836NLWFT1G
onsemi
MOSFET N-CH 80V 16A/77A 5DFN
NVMFWS016N06CT1G
NVMFWS016N06CT1G
onsemi
MOSFET N-CH 60V 10A/33A 5DFN
AOW66616
AOW66616
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 33A/140A TO262
IPI90R340C3XKSA2
IPI90R340C3XKSA2
Infineon Technologies
MOSFET N-CH 900V 15A TO262-3
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
IRFS4710PBF
IRFS4710PBF
Infineon Technologies
MOSFET N-CH 100V 75A D2PAK
NTTFS4C25NTWG
NTTFS4C25NTWG
onsemi
MOSFET N-CH 30V 5A/27A 8WDFN
AOD32326
AOD32326
Alpha & Omega Semiconductor Inc.
30V N-CHANNEL MOSFET
You May Also Be Interested In
G4953S
G4953S
Goford Semiconductor
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
G3404B
G3404B
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
G10N03S
G10N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
G12P04K
G12P04K
Goford Semiconductor
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
GC11N65F
GC11N65F
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G30N02T
G30N02T
Goford Semiconductor
N20V,RD(MAX)<[email protected],VTH0.5V~1.
GT105N10F
GT105N10F
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<