G1002L

G1002L

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G1002L
Description:
N100V,RD(MAX)<250M@10V,VTH1.2V~2
Package:
Tape & Reel (TR)
Datasheet:
G1002L Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G1002L
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:413 pF @ 50 V
FET Feature:-
Power Dissipation (Max):1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3L
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Share:
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