G86N06K

G86N06K

Images are for reference only
See Product Specifications

G86N06K
Description:
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Package:
Tape & Reel (TR)
Datasheet:
G86N06K Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G86N06K
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:68A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:8.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2860 pF @ 25 V
FET Feature:-
Power Dissipation (Max):88W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2454
Stock:
2454 Can Ship Immediately
  • Share:
For Use With
PJD9P06A-AU_L2_000A1
PJD9P06A-AU_L2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IRF610PBF-BE3
IRF610PBF-BE3
Vishay Siliconix
MOSFET N-CH 200V 3.3A TO220AB
DN3145N8-G
DN3145N8-G
Microchip Technology
MOSFET N-CH 450V 100MA TO243AA
DMP3007SCGQ-7
DMP3007SCGQ-7
Diodes Incorporated
MOSFET P-CH 30V 50A 8DFN
2SK3048
2SK3048
Panasonic Electronic Components
MOSFET N-CH 600V 3A TO220D-A1
IRFBF20L
IRFBF20L
Vishay Siliconix
MOSFET N-CH 900V 1.7A I2PAK
SPI07N60C3HKSA1
SPI07N60C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO262-3
IRF3710ZSTRRPBF
IRF3710ZSTRRPBF
Infineon Technologies
MOSFET N-CH 100V 59A D2PAK
SI4840DY-T1-GE3
SI4840DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 10A 8SO
TK20S06K3L(T6L1,NQ
TK20S06K3L(T6L1,NQ
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 20A DPAK
NDPL070N10BG
NDPL070N10BG
onsemi
MOSFET N-CH 100V 70A TO220-3
R6018JNXC7G
R6018JNXC7G
Rohm Semiconductor
MOSFET N-CH 600V 18A TO220FM
You May Also Be Interested In
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
3400L
3400L
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
03N06L
03N06L
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G45P02D3
G45P02D3
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<
G7P03L
G7P03L
Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G2304
G2304
Goford Semiconductor
MOSFET N-CH 30V 3.6A SOT-23
06N06L
06N06L
Goford Semiconductor
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
GT095N10D5
GT095N10D5
Goford Semiconductor
N100V,RD(MAX)<11M@10V,RD(MAX)<15
G100N03D5
G100N03D5
Goford Semiconductor
N-CH, 30V, 100A, RD(MAX)<3.5M@10
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.