G86N06K

G86N06K

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G86N06K
Description:
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
Package:
Tape & Reel (TR)
Datasheet:
G86N06K Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G86N06K
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:68A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:8.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2860 pF @ 25 V
FET Feature:-
Power Dissipation (Max):88W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2454
Stock:
2454 Can Ship Immediately
  • Share:
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