G01N20LE

G01N20LE

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G01N20LE
Description:
N200V,RD(MAX)<850M@10V,RD(MAX)<9
Package:
Tape & Reel (TR)
Datasheet:
G01N20LE Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G01N20LE
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:850mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 0
Stock:
0 Can Ship Immediately
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