03N06

03N06

Images are for reference only
See Product Specifications

03N06
Description:
N60V,RD(MAX)<100M@10V,RD(MAX)<12
Package:
Tape & Reel (TR)
Datasheet:
03N06 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:03N06
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.6 nC @ 30 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1.7W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 686
Stock:
686 Can Ship Immediately
  • Share:
For Use With
IRFW730BTM
IRFW730BTM
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
DMN62D0U-7
DMN62D0U-7
Diodes Incorporated
MOSFET N-CH 60V 380MA SOT23
PSMN1R1-25YLC,115
PSMN1R1-25YLC,115
Nexperia USA Inc.
MOSFET N-CH 25V 100A LFPAK56
DMN63D8LW-13
DMN63D8LW-13
Diodes Incorporated
MOSFET N-CH 30V 380MA SOT323
DMTH8008LPSQ-13
DMTH8008LPSQ-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
APT8065BVFRG
APT8065BVFRG
Microchip Technology
MOSFET N-CH 800V 13A TO247
PMZ350XN,315
PMZ350XN,315
Nexperia USA Inc.
MOSFET N-CH 30V 1.87A DFN1006-3
IRFR014
IRFR014
Vishay Siliconix
MOSFET N-CH 60V 7.7A DPAK
IRLZ44ZS
IRLZ44ZS
Infineon Technologies
MOSFET N-CH 55V 51A D2PAK
ZVN4206ASTOB
ZVN4206ASTOB
Diodes Incorporated
MOSFET N-CH 60V 600MA E-LINE
NTDV5804NT4G
NTDV5804NT4G
onsemi
MOSFET N-CH 40V 69A DPAK
IPI80P04P4L04AKSA1
IPI80P04P4L04AKSA1
Infineon Technologies
MOSFET P-CH 40V 80A TO262-3
You May Also Be Interested In
G1003B
G1003B
Goford Semiconductor
N100V,RD(MAX)<170M@10V,RD(MAX)<1
G50N03D5
G50N03D5
Goford Semiconductor
N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
G29
G29
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<4
G20N03K
G20N03K
Goford Semiconductor
N30V,RD(MAX)<20M@10V,RD(MAX)<24M
G15P04K
G15P04K
Goford Semiconductor
P40V,RD(MAX)<39M@-10V,RD(MAX)<70
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
GC11N65T
GC11N65T
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC11N65F
GC11N65F
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G48N03D3
G48N03D3
Goford Semiconductor
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G65P06T
G65P06T
Goford Semiconductor
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~