18N20

18N20

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See Product Specifications

18N20
Description:
N 200V, RD(MAX)<0.16@10V,VTH1.0V
Package:
Tape & Reel (TR)
Datasheet:
18N20 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:18N20
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:836 pF @ 25 V
FET Feature:-
Power Dissipation (Max):65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
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