G08P06D3

G08P06D3

Images are for reference only
See Product Specifications

G08P06D3
Description:
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Package:
Tape & Reel (TR)
Datasheet:
G08P06D3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G08P06D3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:52mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2972 pF @ 30 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (3.15x3.05)
Package / Case:8-PowerVDFN
In Stock: 5000
Stock:
5000 Can Ship Immediately
  • Share:
For Use With
BSS87,115
BSS87,115
Nexperia USA Inc.
MOSFET N-CH 200V 400MA SOT89
BSC097N06NSATMA1
BSC097N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 46A TDSON-8-6
AON6268
AON6268
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 44A 8DFN
APT77N60JC3
APT77N60JC3
Microchip Technology
MOSFET N-CH 600V 77A ISOTOP
AO4453
AO4453
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 12V 9A 8SOIC
TSM70N1R4CP ROG
TSM70N1R4CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CH 700V 3.3A TO252
NVTFS4C06NWFTWG
NVTFS4C06NWFTWG
onsemi
MOSFET N-CH 30V 21A 8WDFN
IRF7463TR
IRF7463TR
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
IPD30N03S2L07ATMA1
IPD30N03S2L07ATMA1
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
TPH2R805PL,LQ
TPH2R805PL,LQ
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR SOP
RS3E130ATTB1
RS3E130ATTB1
Rohm Semiconductor
PCH -30V -13A POWER MOSFET : RS3
RDD020N50TL
RDD020N50TL
Rohm Semiconductor
MOSFET N-CH 500V 2A CPT3
You May Also Be Interested In
G4953S
G4953S
Goford Semiconductor
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
G1003B
G1003B
Goford Semiconductor
N100V,RD(MAX)<170M@10V,RD(MAX)<1
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
GT110N06S
GT110N06S
Goford Semiconductor
N60V,RD(MAX)<[email protected],RD(MAX)<1
G29
G29
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<4
G09P02L
G09P02L
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<3
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
G07P04S
G07P04S
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10