G30N03D3

G30N03D3

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G30N03D3
Description:
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Package:
Tape & Reel (TR)
Datasheet:
G30N03D3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G30N03D3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:825 pF @ 15 V
FET Feature:-
Power Dissipation (Max):24W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (3.15x3.05)
Package / Case:8-PowerVDFN
In Stock: 5000
Stock:
5000 Can Ship Immediately
  • Share:
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