GT110N06S

GT110N06S

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GT110N06S
Description:
N60V,RD(MAX)<[email protected],RD(MAX)<1
Package:
Tape & Reel (TR)
Datasheet:
GT110N06S Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT110N06S
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
In Stock: 6837
Stock:
6837 Can Ship Immediately
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