G33N03D3

G33N03D3

Images are for reference only
See Product Specifications

G33N03D3
Description:
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Package:
Tape & Reel (TR)
Datasheet:
G33N03D3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G33N03D3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Rds On (Max) @ Id, Vgs:13mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1530pF @ 15V
Power - Max:18.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:8-DFN (3x3)
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
AUIRFN8459TR
AUIRFN8459TR
Infineon Technologies
MOSFET 2N-CH 40V 50A 8PQFN
UPA2352T1P-E4-A
UPA2352T1P-E4-A
Renesas Electronics America Inc
2-ELEMENT, N-CHANNEL MOSFET
DMG4511SK4-13
DMG4511SK4-13
Diodes Incorporated
MOSFET N/P-CH 35V TO252-4L
MCH6663-TL-W
MCH6663-TL-W
onsemi
MOSFET N/P-CH 30V 1.8/1.5A MCPH6
NTMFD6H852NLT1G
NTMFD6H852NLT1G
onsemi
MOSFET N-CH 80V 8DFN
IRF9952TR
IRF9952TR
Infineon Technologies
MOSFET N/P-CH 30V 8-SOIC
FDG6301N_D87Z
FDG6301N_D87Z
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
SI4972DY-T1-GE3
SI4972DY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 10.8A 8-SOIC
FC6546010R
FC6546010R
Panasonic Electronic Components
MOSFET 2N-CH 60V 0.1A SMINI6-F3
AON4605_001
AON4605_001
Alpha & Omega Semiconductor Inc.
MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
PMDPB760ENX
PMDPB760ENX
WeEn Semiconductors
MOSFET AXIAL
NTLUD3A260PZTBG
NTLUD3A260PZTBG
onsemi
MOSFET 2P-CH 20V 1.3A 6UDFN
You May Also Be Interested In
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
G3404LL
G3404LL
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G7P03S
G7P03S
Goford Semiconductor
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
G2012
G2012
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G06N10
G06N10
Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3
G12P03D3
G12P03D3
Goford Semiconductor
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G16P03D3
G16P03D3
Goford Semiconductor
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
G26P04D5
G26P04D5
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
GT095N10D5
GT095N10D5
Goford Semiconductor
N100V,RD(MAX)<11M@10V,RD(MAX)<15