GT035N06T

GT035N06T

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GT035N06T
Description:
N-CH, 60V,170A, RD(MAX)<3.5M@10V
Package:
Tube
Datasheet:
GT035N06T Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT035N06T
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5064 pF @ 30 V
FET Feature:-
Power Dissipation (Max):215W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
In Stock: 200
Stock:
200 Can Ship Immediately
  • Share:
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