G1003A

G1003A

Images are for reference only
See Product Specifications

G1003A
Description:
N100V,RD(MAX)<210M@10V,RD(MAX)<2
Package:
Tape & Reel (TR)
Datasheet:
G1003A Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G1003A
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:210mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:622 pF @ 25 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 1249
Stock:
1249 Can Ship Immediately
  • Share:
For Use With
FDMS4D0N12C
FDMS4D0N12C
onsemi
MOSFET N-CH 120V 18.5A/114A 8QFN
IXTA1N200P3HV
IXTA1N200P3HV
IXYS
MOSFET N-CH 2000V 1A TO263
STP100N6F7
STP100N6F7
STMicroelectronics
MOSFET N-CH 60V 100A TO220
IXTT140N10P
IXTT140N10P
IXYS
MOSFET N-CH 100V 140A TO268
DMP6023LFG-13
DMP6023LFG-13
Diodes Incorporated
MOSFET P-CH 60V 7.7A PWRDI3333-8
DMTH8004LPS-13
DMTH8004LPS-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
GT105N10T
GT105N10T
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
IRFB16N50KPBF
IRFB16N50KPBF
Vishay Siliconix
MOSFET N-CH 500V 17A TO220AB
TPCF8B01(TE85L,F,M
TPCF8B01(TE85L,F,M
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2.7A VS-8
SIE820DF-T1-E3
SIE820DF-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 50A 10POLARPAK
AO4430L
AO4430L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 18A 8SOIC
R6004ENXC7G
R6004ENXC7G
Rohm Semiconductor
600V 4A TO-220FM, LOW-NOISE POWE
You May Also Be Interested In
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G12P03D3
G12P03D3
Goford Semiconductor
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
G23N06K
G23N06K
Goford Semiconductor
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
5N20A
5N20A
Goford Semiconductor
N200V,RD(MAX)<650M@10V,VTH1V~3V,
G10N03S
G10N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<16M
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC11N65M
GC11N65M
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GT52N10T
GT52N10T
Goford Semiconductor
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
GC20N65Q
GC20N65Q
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
G6P06
G6P06
Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14