G15N10C

G15N10C

Images are for reference only
See Product Specifications

G15N10C
Description:
N100V,RD(MAX)<110M@10V,RD(MAX)<1
Package:
Tape & Reel (TR)
Datasheet:
G15N10C Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G15N10C
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2495
Stock:
2495 Can Ship Immediately
  • Share:
For Use With
IPP65R660CFD
IPP65R660CFD
Infineon Technologies
N-CHANNEL POWER MOSFET
STI10N62K3
STI10N62K3
STMicroelectronics
MOSFET N-CH 620V 8.4A I2PAK
IPP60R040C7XKSA1
IPP60R040C7XKSA1
Infineon Technologies
MOSFET N-CH 600V 50A TO220-3
IPB50N10S3L16ATMA1
IPB50N10S3L16ATMA1
Infineon Technologies
MOSFET N-CH 100V 50A TO263-3
SQJA02EP-T1_GE3
SQJA02EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 60A PPAK SO-8
IPB031NE7N3 G
IPB031NE7N3 G
Infineon Technologies
N-CHANNEL POWER MOSFET
AOTF9N70
AOTF9N70
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 9A TO220-3F
AUIRFN8401TR
AUIRFN8401TR
Infineon Technologies
AUIRFN8401 - 20V-40V N-CHANNEL A
IXFV96N15P
IXFV96N15P
IXYS
MOSFET N-CH 150V 96A PLUS220
IRF3709ZSTRLPBF
IRF3709ZSTRLPBF
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
RJK4018DPK-00#T0
RJK4018DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 400V 43A TO3P
AOTF10T60_001
AOTF10T60_001
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V TO-220F
You May Also Be Interested In
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
G1003B
G1003B
Goford Semiconductor
N100V,RD(MAX)<170M@10V,RD(MAX)<1
G20N03D2
G20N03D2
Goford Semiconductor
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
3400
3400
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
G65P06K
G65P06K
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
60N06
60N06
Goford Semiconductor
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
G48N03D3
G48N03D3
Goford Semiconductor
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
45P40
45P40
Goford Semiconductor
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
G08N06S
G08N06S
Goford Semiconductor
N60V, RD(MAX)<30M@10V,RD(MAX)<40