G11S

G11S

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G11S
Description:
P-20V,RD(MAX)<[email protected],RD(MAX
Package:
Tape & Reel (TR)
Datasheet:
G11S Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G11S
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:18.4mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2455 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP
Package / Case:8-SOIC (0.154", 3.90mm Width)
In Stock: 0
Stock:
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