G30N02T

G30N02T

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G30N02T
Description:
N20V,RD(MAX)<[email protected],VTH0.5V~1.
Package:
Tube
Datasheet:
G30N02T Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G30N02T
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:13mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 10 V
FET Feature:-
Power Dissipation (Max):40W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
In Stock: 0
Stock:
0 Can Ship Immediately
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