60N06

60N06

Images are for reference only
See Product Specifications

60N06
Description:
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Package:
Tape & Reel (TR)
Datasheet:
60N06 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:60N06
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:17mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 30 V
FET Feature:-
Power Dissipation (Max):85W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252 (DPAK)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 2008
Stock:
2008 Can Ship Immediately
  • Share:
For Use With
IPD60R1K0CEAUMA1
IPD60R1K0CEAUMA1
Infineon Technologies
CONSUMER
MMFTP84
MMFTP84
Diotec Semiconductor
MOSFET P-CH 60V 130MA SOT23-3
IXFK320N17T2
IXFK320N17T2
IXYS
MOSFET N-CH 170V 320A TO264AA
BUZ311
BUZ311
Infineon Technologies
N-CHANNEL POWER MOSFET
FQPF5P20
FQPF5P20
onsemi
MOSFET P-CH 200V 3.4A TO220F
STW35N65DM2
STW35N65DM2
STMicroelectronics
MOSFET N-CH 650V 32A TO247
RFP40N10_F102
RFP40N10_F102
Fairchild Semiconductor
40A, 100V, 0.04OHM, N-CHANNEL PO
IRL3103SPBF
IRL3103SPBF
Infineon Technologies
MOSFET N-CH 30V 64A D2PAK
NTMFS4108NT1G
NTMFS4108NT1G
onsemi
MOSFET N-CH 30V 13.5A 5DFN
2SK4210
2SK4210
onsemi
MOSFET N-CH 900V 10A TO3PB
NTMFS5C404NLTWFT3G
NTMFS5C404NLTWFT3G
onsemi
MOSFET N-CH 40V 5DFN
SCT4062KEHRC11
SCT4062KEHRC11
Rohm Semiconductor
1200V, 26A, 3-PIN THD, TRENCH-ST
You May Also Be Interested In
G20N06D52
G20N06D52
Goford Semiconductor
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G3035
G3035
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
G2312
G2312
Goford Semiconductor
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
G33N03S
G33N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G15P04K
G15P04K
Goford Semiconductor
P40V,RD(MAX)<39M@-10V,RD(MAX)<70
GT100N12T
GT100N12T
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G26P04D5
G26P04D5
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G08P06D3
G08P06D3
Goford Semiconductor
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
G20P10KE
G20P10KE
Goford Semiconductor
P-CH, -100V, 20A, RD(MAX)<116M@-
G30N02T
G30N02T
Goford Semiconductor
N20V,RD(MAX)<[email protected],VTH0.5V~1.