G29

G29

Images are for reference only
See Product Specifications

G29
Description:
P15V,RD(MAX)<[email protected],RD(MAX)<4
Package:
Tape & Reel (TR)
Datasheet:
G29 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:G29
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:30mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1151 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 1505
Stock:
1505 Can Ship Immediately
  • Share:
For Use With
IPD60R600P7ATMA1
IPD60R600P7ATMA1
Infineon Technologies
MOSFET N-CH 650V 6A TO252-3
IXFR140N30P
IXFR140N30P
IXYS
MOSFET N-CH 300V 70A ISOPLUS247
RQK0202RGDQAWS#H6
RQK0202RGDQAWS#H6
Renesas Electronics America Inc
P CH MOS FET POWER SWITCHING
DMTH10H003SPSW-13
DMTH10H003SPSW-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
NDS351N
NDS351N
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
IRFPC50LC
IRFPC50LC
Vishay Siliconix
MOSFET N-CH 600V 11A TO247-3
IRFR9014NTR
IRFR9014NTR
Vishay Siliconix
MOSFET P-CH 60V 5.1A DPAK
NTB13N10G
NTB13N10G
onsemi
MOSFET N-CH 100V 13A D2PAK
SI7455DP-T1-E3
SI7455DP-T1-E3
Vishay Siliconix
MOSFET P-CH 80V 28A PPAK SO-8
64-2155PBF
64-2155PBF
Infineon Technologies
MOSFET N-CH 150V 86A D2PAK
TPH3202PS
TPH3202PS
Transphorm
GANFET N-CH 600V 9A TO220AB
IRF7456TRPBF-1
IRF7456TRPBF-1
Infineon Technologies
MOSFET N-CH 20V 16A 8SO
You May Also Be Interested In
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
03N06L
03N06L
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G7P03S
G7P03S
Goford Semiconductor
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
GT650N15K
GT650N15K
Goford Semiconductor
N150V,RD(MAX)<65M@10V,VTH2.5V~4.
3400
3400
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
G65P06K
G65P06K
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
G6P06
G6P06
Goford Semiconductor
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
GT060N04D3
GT060N04D3
Goford Semiconductor
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
GT095N10K
GT095N10K
Goford Semiconductor
N100V, RD(MAX)<10.5M@10V,RD(MAX)