IPI020N06NAKSA1

IPI020N06NAKSA1

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IPI020N06NAKSA1
Description:
MOSFET N-CH 60V 29A/120A TO262
Package:
Bulk
Datasheet:
IPI020N06NAKSA1 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:IPI020N06NAKSA1
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Packaging:Bulk
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7800 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
In Stock: 0
Stock:
0 Can Ship Immediately
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