GoodChip

Transistors - FETs, MOSFETs - Single

39097 Items

Mfr Part #	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
UF3C120080K4S SICFET N-CH 1200V 33A TO247-4 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IPW65R045C7FKSA1 MOSFET N-CH 650V 46A TO247-3 Infineon Technologies	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	45mOhm @ 24.9A, 10V	4V @ 1.25mA	93 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPW60R040C7XKSA1 MOSFET N-CH 600V 50A TO247-3 Infineon Technologies	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	40mOhm @ 24.9A, 10V	4V @ 1.24mA	107 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
2N6661 MOSFET N-CH 90V 350MA TO39 Microchip Technology		Bag	Active	N-Channel	MOSFET (Metal Oxide)	90 V	350mA (Tj)	5V, 10V	4Ohm @ 1A, 10V	2V @ 1mA	-	±20V	50 pF @ 24 V	-	6.25W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
IXTH02N250 MOSFET N-CH 2500V 200MA TO247 IXYS		Tube	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	200mA (Tc)	10V	450Ohm @ 50mA, 10V	4.5V @ 250µA	7.4 nC @ 10 V	±20V	116 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
SIHG018N60E-GE3 MOSFET N-CH 600V 99A TO247AC Vishay Siliconix	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	99A (Tc)	10V	23mOhm @ 25A, 10V	5V @ 250µA	228 nC @ 10 V	±30V	7612 pF @ 100 V	-	524W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPT60R028G7XTMA1 MOSFET N-CH 600V 75A 8HSOF Infineon Technologies	CoolMOS™ G7	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	75A (Tc)	10V	28mOhm @ 28.8A, 10V	4V @ 1.44mA	123 nC @ 10 V	±20V	4820 pF @ 400 V	-	391W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-2	8-PowerSFN
IMW65R048M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies		Tube	Active	-	-	-	39A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
G3R40MT12D SIC MOSFET N-CH 71A TO247-3 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	71A (Tc)	15V	48mOhm @ 35A, 15V	2.69V @ 10mA	106 nC @ 15 V	±15V	2929 pF @ 800 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R40MT12J SIC MOSFET N-CH 75A TO263-7 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	75A (Tc)	15V	48mOhm @ 35A, 15V	2.69V @ 10mA	106 nC @ 15 V	±15V	2929 pF @ 800 V	-	374W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
UJ4C075018K3S SICFET N-CH 750V 81A TO247-3 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	81A (Tc)	-	23mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1422 pF @ 100 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3C065030T3S MOSFET N-CH 650V 85A TO220-3 UnitedSiC		Tube	Active	N-Channel	-	650 V	85A (Tc)	12V	35mOhm @ 50A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
UJ3C065030T3S MOSFET N-CH 650V 85A TO220-3 UnitedSiC		Tube	Active	N-Channel	-	650 V	85A (Tc)	12V	35mOhm @ 50A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
UJ4C075018K4S SICFET N-CH 750V 81A TO247-4 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	81A (Tc)	-	23mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1422 pF @ 100 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
SPW47N60C3FKSA1 MOSFET N-CH 650V 47A TO247-3 Infineon Technologies	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	47A (Tc)	10V	70mOhm @ 30A, 10V	3.9V @ 2.7mA	320 nC @ 10 V	±20V	6800 pF @ 25 V	-	415W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
UJ3C065030K3S MOSFET N-CH 650V 85A TO247-3 UnitedSiC		Tube	Active	N-Channel	-	650 V	85A (Tc)	12V	35mOhm @ 50A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3C065030K4S MOSFET N-CH 650V 85A TO247-4 UnitedSiC		Tube	Active	N-Channel	-	650 V	85A (Tc)	12V	35mOhm @ 50A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXFH16N120P MOSFET N-CH 1200V 16A TO247AD IXYS	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	950mOhm @ 8A, 10V	6.5V @ 1mA	120 nC @ 10 V	±30V	6900 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFT170N25X3HV MOSFET N-CH 250V 170A TO268HV IXYS	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	170A (Tc)	10V	7.4mOhm @ 85A, 10V	4.5V @ 4mA	190 nC @ 10 V	±20V	13500 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IXFK44N80P MOSFET N-CH 800V 44A TO264AA IXYS	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	44A (Tc)	10V	190mOhm @ 22A, 10V	5V @ 8mA	198 nC @ 10 V	±30V	12000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA