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Mfr Part # |
RFQ |
Series |
Packaging |
Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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OptiMOS™ |
Tape & Reel (TR) |
Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 8V, 10V | 6.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 7300 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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aMOS™ |
Tube |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 99mOhm @ 21A, 10V | 3.8V @ 250µA | 40 nC @ 10 V | ±30V | 2154 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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HEXFET® |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 209A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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G2R™ |
Tube |
Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 3A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | - | +20V, -10V | 139 pF @ 1000 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Automotive, AEC-Q101, OptiMOS™ |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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FRFET®, SuperFET® II |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 72mOhm @ 26A, 10V | 5V @ 250µA | 215 nC @ 10 V | ±20V | 8660 pF @ 100 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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OptiMOS™ 5 |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 8V, 10V | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 7800 pF @ 75 V | - | 500mW (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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CoolMOS™ |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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TrenchP™ |
Tube |
Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 140A (Tc) | 10V | 9mOhm @ 70A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±15V | 13500 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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CoolMOS™ C7 |
Tape & Reel (TR) |
Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4.5V @ 200µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Ta) | 15V | 7Ohm @ 2A, 15V | - | - | ±20V | 1700 pF @ 10 V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-220-3 Full Pack |
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Depletion |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96 nC @ 5 V | ±20V | 2800 pF @ 25 V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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CoolMOS™ |
Tube |
Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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MDmesh™ II |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 158mOhm @ 10.5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1735 pF @ 25 V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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G3R™ |
Tube |
Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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OptiMOS™ |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 8V, 10V | 7.5mOhm @ 43A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 7280 pF @ 75 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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CoolMOS™ CFD7 |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-21 | TO-247-3 |
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OptiMOS™ |
Tube |
Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Tube |
Active | N-Channel | SiCFET (Cascode SiCJFET) | 1700 V | 7.6A (Tc) | 12V | 515mOhm @ 5A, 12V | 6V @ 10mA | 27.5 nC @ 15 V | ±25V | 740 pF @ 100 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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CoolSiC™ |
Tube |
Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | 15V, 18V | 455mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3 nC @ 18 V | +23V, -7V | 182 pF @ 800 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
