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Transistors - FETs, MOSFETs - Single

39097 Items

Mfr Part #	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
UJ4SC075009K4S 750V/9MOHM, SIC, STACKED CASCODE UnitedSiC		Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	106A (Tc)	12V	11.5mOhm @ 70A, 12V	5.5V @ 10mA	75 nC @ 15 V	±20V	3340 pF @ 400 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXTF02N450 MOSFET N-CH 4500V 200MA I4PAC IXYS		Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	200mA (Tc)	10V	750Ohm @ 10mA, 10V	6.5V @ 250µA	10.4 nC @ 10 V	±20V	256 pF @ 25 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™	i4-Pac™-5 (3 Leads)
IXTN200N10L2 MOSFET N-CH 100V 178A SOT227B IXYS	Linear L2™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	178A (Tc)	10V	11mOhm @ 100A, 10V	4.5V @ 3mA	540 nC @ 10 V	±20V	23000 pF @ 25 V	-	830W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTT1N450HV MOSFET N-CH 4500V 1A TO268 IXYS		Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	1A (Tc)	10V	85Ohm @ 50mA, 10V	6.5V @ 250µA	40 nC @ 10 V	±20V	1730 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MSC025SMA120J SICFET N-CH 1.2KV 77A SOT227 Microchip Technology		Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	77A (Tc)	20V	31mOhm @ 40A, 20V	2.8V @ 1mA	232 nC @ 20 V	+25V, -10V	3020 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
UF3SC120016K3S SICFET N-CH 1200V 107A TO247-3 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	107A (Tc)	12V	21mOhm @ 50A, 12V	6V @ 10mA	218 nC @ 15 V	±20V	7824 pF @ 800 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3SC120016K4S SICFET N-CH 1200V 107A TO247-4 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	107A (Tc)	12V	21mOhm @ 50A, 12V	6V @ 10mA	218 nC @ 15 V	±20V	7824 pF @ 800 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXTK5N250 MOSFET N-CH 2500V 5A TO264 IXYS		Tube	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	5A (Tc)	10V	8.8Ohm @ 2.5A, 10V	5V @ 1mA	200 nC @ 10 V	±30V	8560 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXKN75N60C MOSFET N-CH 600V 75A SOT-227B IXYS	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	75A (Tc)	10V	36mOhm @ 50A, 10V	3.9V @ 5mA	500 nC @ 10 V	±20V	-	Super Junction	560W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTX4N300P3HV MOSFET N-CH 3000V 4A TO247PLUSHV IXYS	Polar P3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3000 V	4A (Tc)	10V	12.5Ohm @ 2A, 10V	5V @ 250µA	139 nC @ 10 V	±20V	3680 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247PLUS-HV	TO-247-3 Variant
UF3SC065007K4S MOSFET N-CH 650V 120A TO247-4 UnitedSiC		Tube	Active	N-Channel	-	650 V	120A (Tc)	12V	9mOhm @ 50A, 12V	6V @ 10mA	214 nC @ 15 V	±20V	-	-	789W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
UF3SC120009K4S SICFET N-CH 1200V 120A TO247-4 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	120A (Tc)	12V	11mOhm @ 100A, 12V	6V @ 10mA	234 nC @ 15 V	±20V	8512 pF @ 100 V	-	789W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
APL502J MOSFET N-CH 500V 52A ISOTOP Microchip Technology		Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	52A (Tc)	15V	90mOhm @ 26A, 12V	4V @ 2.5mA	-	±30V	9000 pF @ 25 V	-	568W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
G3R20MT17K SIC MOSFET N-CH 124A TO247-4 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	124A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	809W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G2R120MT33J SIC MOSFET N-CH TO263-7 GeneSiC Semiconductor	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	35A	20V	156mOhm @ 20A, 20V	-	145 nC @ 20 V	+25V, -10V	3706 pF @ 1000 V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IXTL2N450 MOSFET N-CH 4500V 2A I5PAK IXYS		Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	2A (Tc)	10V	23Ohm @ 1A, 10V	6V @ 250µA	156 nC @ 10 V	±20V	6900 pF @ 25 V	-	220W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-Pak™	ISOPLUSi5-Pak™
SSM3K72KCT,L3F MOSFET N-CH 60V 400MA CST3 Toshiba Semiconductor and Storage	U-MOSVII-H	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	400mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	CST3	SC-101, SOT-883
2N7002KW_R1_00001 SOT-323, MOSFET Panjit International Inc.		Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	2.5V @ 250µA	0.8 nC @ 4.5 V	±20V	35 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
NX7002BKHH MOSFET N-CH 60V 350MA DFN0606-3 Nexperia USA Inc.		Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	350mA (Ta)	4.5V, 10V	2.8Ohm @ 200mA, 10V	2.1V @ 250µA	1 nC @ 10 V	±20V	22.2 pF @ 30 V	-	380mW (Ta), 2.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN0606-3	3-XFDFN
SSM3K72CFS,LF MOSFET N-CH 60V 170MA SSM Toshiba Semiconductor and Storage	U-MOSVII-H	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	170mA (Ta)	4.5V, 10V	3.9Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 4.5 V	±20V	17 pF @ 10 V	-	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SSM	SC-75, SOT-416