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Transistors - FETs, MOSFETs - Single

39097 Items

Mfr Part #	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP200N25N3GXKSA1 MOSFET N-CH 250V 64A TO220-3 Infineon Technologies	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	64A (Tc)	10V	20mOhm @ 64A, 10V	4V @ 270µA	86 nC @ 10 V	±20V	7100 pF @ 100 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
UJ4C075060K4S SICFET N-CH 750V 28A TO247-4 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	28A (Tc)	-	74mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1422 pF @ 100 V	-	155W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXFH50N20 MOSFET N-CH 200V 50A TO247AD IXYS	HiPerFET™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	45mOhm @ 25A, 10V	4V @ 4mA	220 nC @ 10 V	±20V	4400 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
G3R75MT12K SIC MOSFET N-CH 41A TO247-4 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	207W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
STP42N65M5 MOSFET N-CH 650V 33A TO220-3 STMicroelectronics	MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	79mOhm @ 16.5A, 10V	5V @ 250µA	100 nC @ 10 V	±25V	4650 pF @ 100 V	-	190W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
IXTH15N50L2 MOSFET N-CH 500V 15A TO247 IXYS	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	15A (Tc)	10V	480mOhm @ 7.5A, 10V	4.5V @ 250µA	123 nC @ 10 V	±20V	4080 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
G3R75MT12J SIC MOSFET N-CH 42A TO263-7 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	42A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	224W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
LSIC1MO120E0160 SICFET N-CH 1200V 22A TO247-3 Littelfuse Inc.		Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	20V	200mOhm @ 10A, 20V	4V @ 5mA	57 nC @ 20 V	+22V, -6V	870 pF @ 800 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
IXFH340N075T2 MOSFET N-CH 75V 340A TO247AD IXYS	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	340A (Tc)	10V	3.2mOhm @ 100A, 10V	4V @ 3mA	300 nC @ 10 V	±20V	19000 pF @ 25 V	-	935W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IXTH11P50 MOSFET P-CH 500V 11A TO247 IXYS		Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	11A (Tc)	10V	750mOhm @ 5.5A, 10V	5V @ 250µA	130 nC @ 10 V	±20V	4700 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IPW60R070C6FKSA1 MOSFET N-CH 600V 53A TO247-3 Infineon Technologies	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	53A (Tc)	10V	70mOhm @ 25.8A, 10V	3.5V @ 1.72mA	170 nC @ 10 V	±20V	3800 pF @ 100 V	-	391W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IXTH48P20P MOSFET P-CH 200V 48A TO247 IXYS	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
G3R160MT17D SIC MOSFET N-CH 21A TO247-3 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	21A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFH50N30Q3 MOSFET N-CH 300V 50A TO247AD IXYS	HiPerFET™, Q3 Class	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	50A (Tc)	10V	80mOhm @ 25A, 10V	6.5V @ 4mA	65 nC @ 10 V	±20V	3160 pF @ 25 V	-	690W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
G3R160MT17J SIC MOSFET N-CH 22A TO263-7 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	22A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
UF3C065030B3 MOSFET N-CH 650V 65A TO263 UnitedSiC		Tape & Reel (TR)	Active	N-Channel	-	650 V	65A (Tc)	12V	35mOhm @ 40A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	242W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDL100N50F MOSFET N-CH 500V 100A TO264-3 onsemi	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	100A (Tc)	10V	55mOhm @ 50A, 10V	5V @ 250µA	238 nC @ 10 V	±30V	12000 pF @ 25 V	-	2500W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3	TO-264-3, TO-264AA
IXFT120N25X3HV MOSFET N-CH 250V 120A TO268HV IXYS	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	12mOhm @ 60A, 10V	4.5V @ 4mA	122 nC @ 10 V	±20V	7870 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
UF3C065040K4S MOSFET N-CH 650V 54A TO247-4 UnitedSiC		Tube	Active	N-Channel	-	650 V	54A (Tc)	12V	52mOhm @ 40A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
UJ3C120080K3S SICFET N-CH 1200V 33A TO247-3 UnitedSiC		Tube	Not For New Designs	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3