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Transistors - FETs, MOSFETs - Single

39097 Items

Mfr Part #	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTX32P60P MOSFET P-CH 600V 32A PLUS247-3 IXYS	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	350mOhm @ 16A, 10V	4V @ 1mA	196 nC @ 10 V	±20V	11100 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFK240N15T2 MOSFET N-CH 150V 240A TO264AA IXYS	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	240A (Tc)	10V	5.2mOhm @ 60A, 10V	5V @ 8mA	460 nC @ 10 V	±20V	32000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
G3R30MT12K SIC MOSFET N-CH 90A TO247-4 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R30MT12J SIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	96A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	459W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IXTT2N170D2 MOSFET N-CH 1700V 2A TO268 IXYS	Depletion	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1700 V	2A (Tj)	-	6.5Ohm @ 1A, 0V	-	110 nC @ 5 V	±20V	3650 pF @ 25 V	Depletion Mode	568W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IPW60R018CFD7XKSA1 MOSFET N CH Infineon Technologies	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	101A (Tc)	10V	18mOhm @ 58.2A, 10V	4.5V @ 2.91mA	251 nC @ 10 V	±20V	9901 pF @ 400 V	-	416W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IMW120R030M1HXKSA1 SICFET N-CH 1.2KV 56A TO247-3 Infineon Technologies	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	15V, 18V	40mOhm @ 25A, 18V	5.7V @ 10mA	63 nC @ 18 V	+23V, -7V	2120 pF @ 800 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IMZA65R027M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies		Tube	Active	-	-	-	59A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
UJ3C120040K3S SICFET N-CH 1200V 65A TO247-3 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	65A (Tc)	12V	45mOhm @ 40A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	429W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3C120040K4S SICFET N-CH 1200V 65A TO247-4 UnitedSiC		Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	65A (Tc)	12V	45mOhm @ 40A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	429W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXTN660N04T4 MOSFET N-CH 40V 660A SOT227B IXYS	Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	660A (Tc)	10V	0.85mOhm @ 100A, 10V	4V @ 250µA	860 nC @ 10 V	±15V	44000 pF @ 25 V	Current Sensing	1040W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTT02N450HV MOSFET N-CH 4500V 200MA TO268 IXYS		Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	200mA (Tc)	10V	750Ohm @ 10mA, 10V	6.5V @ 250µA	10.4 nC @ 10 V	±20V	256 pF @ 25 V	-	113W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
G3R45MT17D SIC MOSFET N-CH 61A TO247-3 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R45MT17K SIC MOSFET N-CH 61A TO247-4 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXTK90N25L2 MOSFET N-CH 250V 90A TO264 IXYS	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	90A (Tc)	10V	33mOhm @ 45A, 10V	4.5V @ 3mA	640 nC @ 10 V	±20V	23000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
NTH4L022N120M3S SIC MOS TO247-4L 22MOHM 1200V onsemi		Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	18V	30mOhm @ 40A, 18V	4.4V @ 20mA	151 nC @ 18 V	+22V, -10V	3175 pF @ 800 V	-	352W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
IXTN600N04T2 MOSFET N-CH 40V 600A SOT227B IXYS	TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	600A (Tc)	10V	1.05mOhm @ 100A, 10V	3.5V @ 250µA	590 nC @ 10 V	±20V	40000 pF @ 25 V	-	940W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTK60N50L2 MOSFET N-CH 500V 60A TO264 IXYS	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	60A (Tc)	10V	100mOhm @ 30A, 10V	4.5V @ 250µA	610 nC @ 10 V	±30V	24000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
G3R20MT12K SIC MOSFET N-CH 128A TO247-4 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	128A (Tc)	15V	24mOhm @ 60A, 15V	2.69V @ 15mA	219 nC @ 15 V	±15V	5873 pF @ 800 V	-	542W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXFN32N100P MOSFET N-CH 1000V 27A SOT-227B IXYS	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	27A (Tc)	10V	320mOhm @ 16A, 10V	6.5V @ 1mA	225 nC @ 10 V	±30V	14200 pF @ 25 V	-	690W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC