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Transistors - FETs, MOSFETs - Single

39097 Items

Mfr Part #	Series	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP60R190C6XKSA1 MOSFET N-CH 600V 20.2A TO220-3 Infineon Technologies	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 9.5A, 10V	3.5V @ 630µA	63 nC @ 10 V	±20V	1400 pF @ 100 V	-	151W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPB180N08S402ATMA1 MOSFET N-CH 80V 180A TO263-7 Infineon Technologies	Automotive, AEC-Q101, OptiMOS™	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	180A (Tc)	10V	2.2mOhm @ 100A, 10V	4V @ 220µA	167 nC @ 10 V	±20V	11550 pF @ 25 V	-	277W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D²Pak (6 Leads + Tab)
FDMT800150DC MOSFET N-CH 150V 15A/99A 8DUAL onsemi	Dual Cool™, PowerTrench®	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	15A (Ta), 99A (Tc)	6V, 10V	6.5mOhm @ 15A, 10V	4V @ 250µA	108 nC @ 10 V	±20V	8205 pF @ 75 V	-	3.2W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-Dual Cool™88	8-PowerVDFN
EPC2030 GANFET NCH 40V 31A DIE EPC	eGaN®	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	31A (Ta)	-	2.4mOhm @ 30A, 5V	2.5V @ 16mA	18 nC @ 5 V	-	1900 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRFI4110GPBF MOSFET N-CH 100V 72A TO220AB FP Infineon Technologies	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	72A (Tc)	10V	4.5mOhm @ 43A, 10V	4V @ 250µA	290 nC @ 10 V	±20V	9540 pF @ 50 V	-	61W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IXFY36N20X3 MOSFET N-CH 200V 36A TO252AA IXYS	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	36A (Tc)	10V	45mOhm @ 18A, 10V	4.5V @ 500µA	21 nC @ 10 V	±20V	1425 pF @ 25 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFP7430PBF MOSFET N-CH 40V 195A TO247AC Infineon Technologies	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	6V, 10V	1.3mOhm @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	14240 pF @ 25 V	-	366W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SUG90090E-GE3 MOSFET N-CH 200V 100A TO247AC Vishay Siliconix	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	100A (Tc)	7.5V, 10V	9.5mOhm @ 20A, 10V	4V @ 250µA	129 nC @ 10 V	±20V	5220 pF @ 100 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
PSMN3R5-80PS,127 MOSFET N-CH 80V 120A TO220AB Nexperia USA Inc.		Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	3.5mOhm @ 25A, 10V	4V @ 1mA	139 nC @ 10 V	±20V	9961 pF @ 40 V	-	338W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN3R3-80PS,127 MOSFET N-CH 80V 120A TO220AB Nexperia USA Inc.		Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	10V	3.3mOhm @ 25A, 10V	4V @ 1mA	139 nC @ 10 V	±20V	9961 pF @ 40 V	-	338W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLB3036PBF MOSFET N-CH 60V 195A TO220AB Infineon Technologies	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	4.5V, 10V	2.4mOhm @ 165A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	11210 pF @ 50 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP460PBF MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix		Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	4200 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
G3R350MT12D SIC MOSFET N-CH 11A TO247-3 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFP4227PBF MOSFET N-CH 200V 65A TO247AC Infineon Technologies	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	65A (Tc)	10V	25mOhm @ 46A, 10V	5V @ 250µA	98 nC @ 10 V	±30V	4600 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP360PBF MOSFET N-CH 400V 23A TO247-3 Vishay Siliconix		Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	23A (Tc)	10V	200mOhm @ 14A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	4500 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFB3077PBF MOSFET N-CH 75V 120A TO220AB Infineon Technologies	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	120A (Tc)	10V	3.3mOhm @ 75A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	9400 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
G2R1000MT17D SIC MOSFET N-CH 4A TO247-3 GeneSiC Semiconductor	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	4A (Tc)	20V	1.2Ohm @ 2A, 20V	4V @ 2mA	-	+20V, -5V	139 pF @ 1000 V	-	53W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPB015N08N5ATMA1 MOSFET N-CH 80V 180A TO263-7 Infineon Technologies	OptiMOS™	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	180A (Tc)	6V, 10V	1.5mOhm @ 100A, 10V	3.8V @ 279µA	222 nC @ 10 V	±20V	16900 pF @ 40 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D²Pak (6 Leads + Tab)
IXTA3N100D2 MOSFET N-CH 1000V 3A TO263 IXYS	Depletion	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	3A (Tc)	-	5.5Ohm @ 1.5A, 0V	-	37.5 nC @ 5 V	±20V	1020 pF @ 25 V	Depletion Mode	125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
G3R350MT12J SIC MOSFET N-CH 11A TO263-7 GeneSiC Semiconductor	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA