GT100N12D5

GT100N12D5

Images are for reference only
See Product Specifications

GT100N12D5
Description:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Package:
Tape & Reel (TR)
Datasheet:
GT100N12D5 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT100N12D5
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:70A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3050 pF @ 60 V
FET Feature:-
Power Dissipation (Max):120W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5x6)
Package / Case:8-PowerVDFN
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
FDB6035AL
FDB6035AL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
SI7414DN-T1-E3
SI7414DN-T1-E3
Vishay Siliconix
MOSFET N-CH 60V 5.6A PPAK1212-8
NVD5C434NT4G
NVD5C434NT4G
onsemi
MOSFET N-CHANNEL 40V 163A DPAK
DMN3008SFG-13
DMN3008SFG-13
Diodes Incorporated
MOSFET N-CH 30V 17.6A PWRDI3333
SIHG17N60D-GE3
SIHG17N60D-GE3
Vishay Siliconix
MOSFET N-CH 600V 17A TO247AC
TK31V60W,LVQ
TK31V60W,LVQ
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A 4DFN
RFD10P03LSM
RFD10P03LSM
onsemi
MOSFET P-CH 30V 10A TO252-3
IPU06N03LAGXK
IPU06N03LAGXK
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
IPD50N06S409ATMA1
IPD50N06S409ATMA1
Infineon Technologies
MOSFET N-CH 60V 50A TO252-3
AOTF10N50FD_001
AOTF10N50FD_001
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 10A TO220-3F
FDD6685-G
FDD6685-G
onsemi
MOSFET N-CH 60V SUPERSOT6
RRR030P03HZGTL
RRR030P03HZGTL
Rohm Semiconductor
MOSFET P-CH 30V 3A TSMT3
You May Also Be Interested In
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G3401L
G3401L
Goford Semiconductor
P30V,RD(MAX)<60M@-10V,RD(MAX)<70
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G30N03D3
G30N03D3
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
3400
3400
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
GT55N06D5
GT55N06D5
Goford Semiconductor
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
G86N06K
G86N06K
Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
GC20N65F
GC20N65F
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
2301H
2301H
Goford Semiconductor
P30V,RD(MAX)<[email protected],RD(MAX)<
G06P01E
G06P01E
Goford Semiconductor
P12V,RD(MAX)<[email protected],RD(MAX)<4
G75P04K
G75P04K
Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-