GT100N12D5

GT100N12D5

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GT100N12D5
Description:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Package:
Tape & Reel (TR)
Datasheet:
GT100N12D5 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT100N12D5
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:70A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3050 pF @ 60 V
FET Feature:-
Power Dissipation (Max):120W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5x6)
Package / Case:8-PowerVDFN
In Stock: 0
Stock:
0 Can Ship Immediately
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