GT100N12D5

GT100N12D5

Images are for reference only
See Product Specifications

GT100N12D5
Description:
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Package:
Tape & Reel (TR)
Datasheet:
GT100N12D5 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:GT100N12D5
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:70A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3050 pF @ 60 V
FET Feature:-
Power Dissipation (Max):120W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5x6)
Package / Case:8-PowerVDFN
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
IRFR9120TRLPBF-BE3
IRFR9120TRLPBF-BE3
Vishay Siliconix
MOSFET P-CH 100V 5.6A DPAK
HUF75344S3ST
HUF75344S3ST
Fairchild Semiconductor
MOSFET N-CH 55V 75A D2PAK
FDN342P
FDN342P
onsemi
MOSFET P-CH 20V 2A SUPERSOT3
ZXMP6A17E6TA
ZXMP6A17E6TA
Diodes Incorporated
MOSFET P-CH 60V 2.3A SOT26
TN0606N3-G
TN0606N3-G
Microchip Technology
MOSFET N-CH 60V 500MA TO92-3
STP150NF55
STP150NF55
STMicroelectronics
MOSFET N-CH 55V 120A TO220AB
BSC090BNS
BSC090BNS
Infineon Technologies
N-CHANNEL POWER MOSFET
PJQ4411P_R2_00001
PJQ4411P_R2_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
BUK961R7-40E,118
BUK961R7-40E,118
NXP USA Inc.
MOSFET N-CH 40V 120A D2PAK
PMF250XN,115
PMF250XN,115
NXP USA Inc.
MOSFET N-CH 30V 900MA SOT323-3
FDMC6675BZ-T
FDMC6675BZ-T
onsemi
INTEGRATED CIRCUIT
MCG30N12Y-TP
MCG30N12Y-TP
Micro Commercial Co
MOSFET N-CH DFN3333
You May Also Be Interested In
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
G3404LL
G3404LL
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G06N10
G06N10
Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3
G40P03K
G40P03K
Goford Semiconductor
P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
60N06
60N06
Goford Semiconductor
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
GC11N65M
GC11N65M
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
GC20N65T
GC20N65T
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
06N06L
06N06L
Goford Semiconductor
N60V,RD(MAX)<42M@10V,RD(MAX)<46M
G20P10KE
G20P10KE
Goford Semiconductor
P-CH, -100V, 20A, RD(MAX)<116M@-
GT095N10D5
GT095N10D5
Goford Semiconductor
N100V,RD(MAX)<11M@10V,RD(MAX)<15
GT035N06T
GT035N06T
Goford Semiconductor
N-CH, 60V,170A, RD(MAX)<3.5M@10V