1002

1002

Images are for reference only
See Product Specifications

1002
Description:
N100V,RD(MAX)<250M@10V,RD(MAX)<2
Package:
Tape & Reel (TR)
Datasheet:
1002 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:1002
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2A
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:387 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Share:
For Use With
RJK0348DPA-WS#J0
RJK0348DPA-WS#J0
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IXFH30N50P
IXFH30N50P
IXYS
MOSFET N-CH 500V 30A TO247AD
G1003B
G1003B
Goford Semiconductor
N100V,RD(MAX)<170M@10V,RD(MAX)<1
SI4842BDY-T1-E3
SI4842BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 28A 8SO
IXFP30N25X3
IXFP30N25X3
IXYS
MOSFET N-CHANNEL 250V 30A TO220
IRF9620
IRF9620
Harris Corporation
3.5A, 200V, 1.500 OHM, P-CHANNEL
RJK0452DPB-00#J5
RJK0452DPB-00#J5
Renesas Electronics America Inc
MOSFET N-CH 40V 45A LFPAK
IRF7769L1TRPBFTR
IRF7769L1TRPBFTR
Infineon Technologies
N-CHANNEL POWER MOSFET
IPB60R105CFD7ATMA1
IPB60R105CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 21A TO263-3-2
UJ4C075044B7S
UJ4C075044B7S
UnitedSiC
750V/44MOHM, N-OFF SIC CASCODE,
SIPC14N50C3X1SA2
SIPC14N50C3X1SA2
Infineon Technologies
TRANSISTOR N-CH
RRF015P03TL
RRF015P03TL
Rohm Semiconductor
MOSFET P-CH 30V 1.5A TUMT3
You May Also Be Interested In
G4616
G4616
Goford Semiconductor
N+P/-40V,RD(MAX)<20M@10V,RD(MAX)
GT090N06D52
GT090N06D52
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
03N06
03N06
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G3404LL
G3404LL
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G01N20LE
G01N20LE
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
G86N06K
G86N06K
Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
G110N06K
G110N06K
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
GC11N65F
GC11N65F
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G26P04D5
G26P04D5
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G50N03J
G50N03J
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
GT088N06T
GT088N06T
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
GT035N06T
GT035N06T
Goford Semiconductor
N-CH, 60V,170A, RD(MAX)<3.5M@10V