SIR618DP-T1-GE3

SIR618DP-T1-GE3

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SIR618DP-T1-GE3
Description:
MOSFET N-CH 200V 14.2A PPAK SO-8
Package:
Tape & Reel (TR)
Datasheet:
SIR618DP-T1-GE3 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:SIR618DP-T1-GE3
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay Siliconix
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:14.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:95mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 7.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 100 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
In Stock: 0
Stock:
0 Can Ship Immediately
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