25P06

25P06

Images are for reference only
See Product Specifications

25P06
Description:
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Package:
Tape & Reel (TR)
Datasheet:
25P06 Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:25P06
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Goford Semiconductor
Packaging:Tape & Reel (TR)
Product Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3384 pF @ 30 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock: 0
Stock:
0 Can Ship Immediately
  • Share:
For Use With
SUP40010EL-GE3
SUP40010EL-GE3
Vishay Siliconix
MOSFET N-CH 40V 120A TO220AB
FDZ7064S
FDZ7064S
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
MSC060SMA070B4
MSC060SMA070B4
Microchip Technology
TRANS SJT N-CH 700V 39A TO247-4
DMN2005UPS-13
DMN2005UPS-13
Diodes Incorporated
MOSFET N-CH 20V 20A POWERDI5060
SI2301A-TP
SI2301A-TP
Micro Commercial Co
MOSFET P-CH 20V 2.8A SOT23
NVTFS052P04M8LTAG
NVTFS052P04M8LTAG
onsemi
MOSFET P-CH 40V 4.7A/13.2A 8WDFN
NVMFS5C680NLWFT1G
NVMFS5C680NLWFT1G
onsemi
MOSFET N-CH 60V 8.1A/21A 5DFN
IPA65R1K5CEXKSA1
IPA65R1K5CEXKSA1
Infineon Technologies
MOSFET N-CH 650V 5.2A TO220
AOW10N65
AOW10N65
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 650V 10A TO262
LTC1624CS8#PBF
LTC1624CS8#PBF
Analog Devices Inc.
LTC1624 - HI EFF SO-8, N-CHENNEL
FQD2N50TM
FQD2N50TM
onsemi
MOSFET N-CH 500V 1.6A DPAK
NTTFS4C06NTWG
NTTFS4C06NTWG
onsemi
MOSFET N-CH 30V 11A/67A 8WDFN
You May Also Be Interested In
G4953S
G4953S
Goford Semiconductor
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
GT1003D
GT1003D
Goford Semiconductor
N100V,RD(MAX)<130M@10V,RD(MAX)<1
03N06L
03N06L
Goford Semiconductor
N60V,RD(MAX)<100M@10V,RD(MAX)<12
G06N10
G06N10
Goford Semiconductor
N100V,RD(MAX)<240M@10V,VTH1.2V~3
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
G65P06K
G65P06K
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
GC11N65K
GC11N65K
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G2304
G2304
Goford Semiconductor
MOSFET N-CH 30V 3.6A SOT-23
GT100N12D5
GT100N12D5
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G15N06K
G15N06K
Goford Semiconductor
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
630A
630A
Goford Semiconductor
N200V,RD(MAX)<280M@10V,VTH1V~3V,
G65P06F
G65P06F
Goford Semiconductor
P-CH, -60V, 65A, RD(MAX)<18M@-10