TP65H070LSG

TP65H070LSG

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TP65H070LSG
Mfr.:
Description:
GANFET N-CH 650V 25A 3PQFN
Package:
Tube
Datasheet:
TP65H070LSG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TP65H070LSG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Transphorm
Packaging:Tube
Product Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
In Stock: 0
Stock:
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