TP65H300G4LSG

TP65H300G4LSG

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TP65H300G4LSG
Mfr.:
Description:
GANFET N-CH 650V 6.5A 3PQFN
Package:
Tube
Datasheet:
TP65H300G4LSG Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:TP65H300G4LSG
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Transphorm
Packaging:Tube
Product Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):21W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
In Stock: 293
Stock:
293 Can Ship Immediately
  • Share:
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