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See Product Specifications
| Part Number: | TP65H050G4WS |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Transphorm |
| Packaging: | Tube |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 60mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id: | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs: | 24 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1000 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 119W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-247-3 |
| Package / Case: | TO-247-3 |
