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See Product Specifications
| Part Number: | IGT60R070D1E8220ATMA1 |
| Category: | Discrete Semiconductor Products |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Packaging: | Bulk |
| Product Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | 1.6V @ 2.6mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | -10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 380 pF @ 400 V |
| FET Feature: | - |
| Power Dissipation (Max): | 125W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-HSOF-8-3 |
| Package / Case: | 8-PowerSFN |
