2SJ532-E

2SJ532-E

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2SJ532-E
Mfr.:
Description:
2SJ532 - P-CHANNEL POWER MOSFET,
Package:
Bulk
Datasheet:
2SJ532-E Datasheet (PDF)
ECAD Model:
-
Product Attributes
Part Number:2SJ532-E
Category:Discrete Semiconductor Products
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Renesas
Packaging:Bulk
Product Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:55mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 10 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-220CFM
Package / Case:TO-220-3 Full Pack
In Stock: 2148
Stock:
2148 Can Ship Immediately
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